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CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based

Vibhu Srivastava1, Prateek Mishra1, Sunny2

  • 1Department of Electronics and Communication Engineering, Indian Institute of Information Technology Allahabad, Prayagraj, 211015, India.

Scientific Reports
|July 9, 2020
PubMed
Summary
This summary is machine-generated.

This study explores Ge2Sb2Te5 (GST) and silicon heterostructures, demonstrating tunable electrical and optical properties for optoelectronic devices. Phase-tuning GST in these heterostructures offers promising applications in integrated photonic circuits.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Optoelectronics

Background:

  • Heterostructures (HS) integrate materials with distinct properties for advanced applications.
  • Phase-change materials (PCMs) like Ge2Sb2Te5 (GST) enable tunable characteristics in devices.
  • Combining PCMs with semiconductors offers new avenues for optoelectronic device design.

Purpose of the Study:

  • To investigate the electrical and optoelectronic properties of p-p and p-n heterostructures formed by Ge2Sb2Te5 (GST) and Silicon (Si).
  • To analyze the impact of phase-tuning GST via thermal annealing on heterostructure performance.
  • To explore the potential of these GST/Si heterostructures in photonic and optoelectronic-integrated circuits.

Main Methods:

  • Fabrication and characterization of GST/Si heterostructures with various contacts (Al, Pt, Ti/Au).
  • Electrical measurements including resistance switching and rectification analysis.
  • Optical characterization using Ellipsometry, UV-Vis-NIR, and Raman spectroscopy.
  • Analysis of band alignment using Kelvin-probe force microscopy and Hall effect measurements.

Main Results:

  • Achieved 2 orders of resistance switching through thermal annealing.
  • Demonstrated significant rectification ratios (500-1000) with different contacts and wavelengths.
  • Obtained high responsivity (>9 A/W) with a photo-to-dark current ratio <1000 in the 0.8-2 μm range.
  • Correlated optoelectronic behavior with band alignment and carrier properties.

Conclusions:

  • GST/Si heterostructures exhibit tunable electrical and optical properties suitable for optoelectronic applications.
  • Phase-tuning of GST is a viable strategy to modify heterostructure characteristics.
  • These findings provide insights into the opto-electrical behavior of PCM/semiconductor junctions for future integrated circuits.