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Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM)
Taeyoon Kim1, Heerak Son1, Inho Kim1
1Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea.
Scientific Reports
|July 11, 2020
Summary
This study explores complementary resistive switching (CRS) in tantalum-oxide memory, demonstrating reversible switching modes based on operational and fabrication conditions. The findings offer insights into conductive filament formation and Schottky barrier modulation for stable device design.
Area of Science:
- Materials Science
- Solid-State Electronics
- Nanotechnology
Background:
- Resistive switching memory offers potential for next-generation data storage.
- Controlling switching modes in memory devices is crucial for stability and performance.
Purpose of the Study:
- To investigate complementary resistive switching (CRS) behaviors in tantalum-oxide based memory devices.
- To understand the reversible switching mode transition between bipolar switching (BRS) and CRS.
- To elucidate the underlying mechanisms governing the switching mode transition.
Main Methods:
- Fabrication of tantalum-oxide memory devices with varying oxygen scavenger layer thickness.
- Electrical characterization including compliance current adjustments.
- Optical measurements to probe the switching mechanism.
Main Results:
- Demonstrated reversible switching between BRS and CRS modes within a single memory cell.
- Identified operational (compliance current) and fabrication (layer thickness) conditions influencing the switching mode.
- Attributed conductance modulation to conductive filament formation and Schottky barrier modulation.
Conclusions:
- The switching mode in these devices is tunable by operational and fabrication parameters.
- Understanding the interplay of filament formation and Schottky barriers is key to controlling resistive switching behavior.
- This research facilitates the design of resistive switching devices with predictable and stable performance.
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