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Updated: Dec 15, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Sub-5 nm monolayer germanium selenide (GeSe) MOSFETs: towards a high performance and stable device

Ying Guo1, Feng Pan2, Gaoyang Zhao3

  • 1School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, P. R. China. guosophia@163.com and School of Materials Science and Engineering, Xi'an University of Technology, Xi'an, 710048, China. zhaogy@xaut.edu.cn.

Nanoscale
|July 15, 2020
PubMed

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