Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

675
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
675
Semiconductors01:22

Semiconductors

1.2K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.2K
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

1.3K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.3K
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

720
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
720
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

466
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
466
Schottky Barrier Diode01:27

Schottky Barrier Diode

791
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
791

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Meta-analysis of the association between retinopathy and the risk of stroke.

Frontiers in medicine·2026
Same author

Identification of Chemical Constituents and Metabolites of Shipi Powder In Vitro and In Vivo Based on Ultra-High-Performance Liquid Chromatography Coupled With Quadrupole Time-of-Flight Tandem Mass Spectrometry.

Journal of separation science·2026
Same author

Tuning Reaction Pathways via Symmetric Fluorination Enables High-Temperature and High-Voltage Electrolytes.

Angewandte Chemie (International ed. in English)·2026
Same author

Formation and detection of marine algal toxins and their distribution in Chinese coastal waters.

Marine environmental research·2026
Same author

Development and testing of a smart empowerment education system for gout patients in suburban areas.

Frontiers in public health·2026
Same author

Hypotension-driven continuous watershed cerebral infarction secondary to critical coronary artery disease: A case report.

Medicine·2026

Related Experiment Video

Updated: Dec 14, 2025

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

6.1K

Efficient 3D silicon mode (de)multiplexer based on a sidewall-aligned vertical coupler.

Xinguo Wang, Jinye Miao, Fangyuan Cheng

    Applied Optics
    |July 17, 2020
    PubMed
    Summary

    A novel 3D mode (de)multiplexer utilizing a sidewall-aligned vertical coupler achieves compact size and low crosstalk. This device enhances functionality and integration for mode division multiplexing (MDM) systems.

    More Related Videos

    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
    09:46

    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

    Published on: August 8, 2025

    949
    Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls
    10:39

    Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls

    Published on: April 12, 2018

    7.7K

    Related Experiment Videos

    Last Updated: Dec 14, 2025

    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
    08:48

    Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

    Published on: September 25, 2020

    6.1K
    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
    09:46

    Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

    Published on: August 8, 2025

    949
    Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls
    10:39

    Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls

    Published on: April 12, 2018

    7.7K

    Area of Science:

    • Photonics and optical engineering
    • Integrated optics
    • Waveguide devices

    Background:

    • Mode division multiplexing (MDM) systems offer increased data capacity by utilizing different spatial modes.
    • Efficient mode (de)multiplexers are crucial for realizing practical MDM systems.
    • Existing designs often face challenges with size, crosstalk, and bandwidth.

    Purpose of the Study:

    • To propose and optimize an efficient three-dimensional (3D) mode (de)multiplexer (DeMUX).
    • To investigate the performance of a novel dual-waveguide 3D-coupler architecture.
    • To demonstrate enhanced functionality and integration capabilities for MDM systems.

    Main Methods:

    • Utilized a dual-waveguide 3D-coupler with vertically aligned silicon and poly-silicon waveguides.
    • Employed the full-vectorial finite element method (FEM) for analysis.
    • Applied the 3D full-vectorial finite difference time domain (FDTD) method for performance evaluation.

    Main Results:

    • Achieved a compact coupling length of 6.88 µm.
    • Demonstrated excellent mode crosstalk of -30.04 dB.
    • Obtained a low insertion loss of 0.02 dB.
    • Reported an ultra-broad 1 dB bandwidth of 300 nm.

    Conclusions:

    • The proposed 3D mode (De)MUX based on a sidewall-aligned vertical coupler is highly efficient.
    • The device shows significant potential for advancing MDM systems.
    • This design can lead to increased functionality and integration in optical communication networks.