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Epitaxial growth of bismuth oxyhalide thin films using mist CVD at atmospheric pressure
Zaichun Sun1, Daichi Oka1, Tomoteru Fukumura2
1Department of Chemistry, Graduate School of Science, Tohoku University, 6-3 Aramaki Aza Aoba, Aoba, Sendai 980-8578, Japan. daichi.oka.d2@tohoku.ac.jp.
Chemical Communications (Cambridge, England)
|July 18, 2020
Abstract:
We report the epitaxial growth of bismuth oxyhalide BiOX (X = Cl, Br, and I) thin films using mist chemical vapour deposition at atmospheric pressure. The thin films grown under optimum conditions possessed atomically flat surfaces and high crystallinity, where the lattice constants of BiOX were controlled by epitaxial strain.
