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Compressive strain formation in surface-damaged crystals.

Claudio Ferrari1, Sara Beretta1, Enzo Rotunno2

  • 11IMEM-CNR Institute, Parco Area delle Scienze 37/A, 43124 Parma, Italy.

Journal of Applied Crystallography
|July 21, 2020
PubMed
Summary
This summary is machine-generated.

Residual strain in damaged GaAs crystals is caused by a surface dislocation network. This network, formed during grinding, creates compressive strain explained by a new half-loop insertion model.

Keywords:
compressive stresscrystal polishingdislocations in indentation processessingle-point diamond turning surface preparationsurface indentation

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Crystallography

Background:

  • Surface damage in semiconductor crystals can induce residual strain.
  • Understanding strain formation is crucial for electronic device performance and reliability.

Purpose of the Study:

  • To investigate the mechanism of residual strain formation in GaAs crystals with surfaces damaged by grinding.
  • To develop and validate a model explaining the observed strain based on microstructural defects.

Main Methods:

  • Transmission electron microscopy (TEM) was used to analyze the microstructure of ground GaAs wafers.
  • Strain measurements were performed and compared with a proposed theoretical model.

Main Results:

  • A dislocation network was observed near the surface of ground GaAs, extending a few micrometres deep.
  • No other defect types were detected, indicating the dislocation network is the primary source of strain.
  • The observed compressive strain was in good agreement with the proposed model.

Conclusions:

  • The formation of dislocation half-loops at the crystal surface is the primary mechanism for inducing compressive residual strain.
  • This mechanism, equivalent to inserting extra half-planes, sufficiently explains the observed strain in damaged GaAs.
  • The proposed model is generalizable to other crystal structures and surface treatments.