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Ferroelectric Domain Wall Memristor.

James P V McConville1, Haidong Lu2, Bo Wang3

  • 1Centre for Nanostructured Media School of Mathematics and Physics Queen's University Belfast Belfast BT7 1NN UK.

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|July 21, 2020
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Summary
This summary is machine-generated.

A novel domain wall memristor in lithium niobate exhibits a twelve-order resistance change. This ferroelectric device shows plasticity, making it suitable for artificial synapse applications in neuromorphic computing.

Keywords:
ferroelectric domain wallmemristor

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Memristors are crucial for next-generation electronics.
  • Ferroelectric domain walls offer unique electrical properties.
  • Lithium niobate is a versatile ferroelectric material.

Purpose of the Study:

  • To develop a domain wall-enabled memristor.
  • To investigate resistance variation in lithium niobate capacitors.
  • To explore potential applications in neuromorphic circuits.

Main Methods:

  • Fabrication of thin-film lithium niobate capacitors.
  • Induction of ferroelectric domain walls using electric-field pulses.
  • Measurement of resistance changes based on applied voltage pulses.

Main Results:

  • Achieved up to twelve orders of magnitude resistance variation.
  • Demonstrated hundreds of distinct conductance states.
  • Observed resistance plasticity with applied voltage pulses.

Conclusions:

  • Domain wall engineering in lithium niobate enables high-resistance-variation memristors.
  • The observed plasticity is promising for artificial synapse development.
  • This technology advances possibilities for neuromorphic computing architectures.