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Updated: Dec 14, 2025

Microwave Photonics Systems Based on Whispering-gallery-mode Resonators
Published on: August 5, 2013
Coupling Interlayer Excitons to Whispering Gallery Modes in van der Waals Heterostructures
Ronja Khelifa1, Patrick Back1, Nikolaus Flöry1
1Photonics Laboratory, ETH Zürich, 8093 Zürich, Switzerland.
Engineered van der Waals heterostructures in hexagonal boron nitride (h-BN) disk resonators enable cavity-coupled emission from transition metal dichalcogenide interlayer excitons. This breakthrough advances on-chip van der Waals photonics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Van der Waals heterostructures offer tunable optoelectronic properties.
- Two-dimensional materials enable novel device architectures.
- Cavity coupling enhances light-matter interactions.
Purpose of the Study:
- To demonstrate cavity-coupled emission from interlayer excitons in transition metal dichalcogenide heterobilayers.
- To engineer on-chip van der Waals photonic devices using hexagonal boron nitride (h-BN) resonators.
- To investigate the impact of heterostructure integration on optical properties.
Main Methods:
- Fabrication of waveguide-coupled disk resonators from hexagonal boron nitride (h-BN).
- Integration of a molybdenum selenide-tungsten selenide (MoSe2-WSe2) heterobilayer within the h-BN structure.
- Characterization of cavity-coupled emission from interlayer excitons.
Main Results:
- Successful demonstration of cavity-coupled emission from MoSe2-WSe2 interlayer excitons.
- Maximized mode overlap and coupling strength by positioning active materials in high optical field regions.
- Unaffected resonator quality factor due to weak reabsorption of interlayer exciton emission.
Conclusions:
- Waveguide-coupled h-BN disk resonators are effective for on-chip van der Waals photonics.
- This platform enables efficient light-matter interaction for interlayer excitons.
- The approach holds promise for developing novel optoelectronic devices.
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