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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Houk Jang1, Chengye Liu1, Henry Hinton1
1School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA.
Researchers developed a 1024-transistor analog optoelectronic processor using molybdenum disulfide (MoS2) field-effect transistors (FETs). This device mimics human vision, capturing and recognizing images with 94% accuracy.
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