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Observation of Dirac state in half-Heusler material YPtBi
M Mofazzel Hosen1, Gyanendra Dhakal1, Klauss Dimitri1
1Department of Physics, University of Central Florida, Orlando, FL, 32816, USA.
Researchers discovered a Dirac state in the superconducting half-Heusler compound YPtBi. This finding highlights half-Heusler materials as promising platforms for exploring novel topological electronic states and devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Physics
Background:
- Half-Heusler compounds exhibit diverse electronic ground states, including superconductivity and heavy-fermion behavior.
- These materials are predicted to host non-trivial topological electronic states, making them attractive for fundamental physics and device applications.
Purpose of the Study:
- To systematically investigate the electronic properties of the superconducting half-Heusler compound YPtBi in its normal state.
- To identify and characterize topological electronic states within YPtBi using experimental techniques.
Main Methods:
- Angle-resolved photoemission spectroscopy (ARPES) was employed to study the electronic band structure.
- First-principles calculations were performed to support and interpret the experimental findings.
Main Results:
- A Dirac state was observed at the $\Gamma$ point of the Brillouin zone, 500 meV below the Fermi level.
- Multiple Fermi surface pockets, including hexagonal and half-oval shapes, were identified at the $\Gamma$ and K points.
- Rashba-split bands and multiple Fermi-level-crossing surface states were detected.
Conclusions:
- The experimental observation of a Dirac state in YPtBi confirms its potential for hosting topological electronic phases.
- This study establishes YPtBi and related half-Heusler compounds as a significant platform for exploring novel topological phenomena and future electronic devices.
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