Electroresistance effect in oxygen-deficient La0.8Ba0.2MnO3-δthin films
Guankai Lin1, Haoru Wang1, Xuhui Cai1
1Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of China.
Summary
Oxygen deficiency in La0.8Ba0.2MnO3- thin films induces significant electroresistance (ER). This ER effect, tunable via oxygen content, shows promise for memristive devices and neuomorphic computing.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Electroresistance (ER) is well-studied in low-bandwidth manganites.
- ER effects in large-bandwidth manganites like Sr- and Ba-doped ones are less explored.
Purpose of the Study:
- Investigate ER in oxygen-deficient La0.8Ba0.2MnO3- thin films.
- Understand the relationship between oxygen content, grain boundaries, and ER.
- Explore potential applications in memristive devices and neuomorphic computing.
Main Methods:
- Fabrication of oxygen-deficient La0.8Ba0.2MnO3- thin films via high current treatment.
- Characterization of ER and magnetoresistance (MR) under varying test currents and temperatures.
- Tuning oxygen content through annealing in air.
Main Results:
- Oxygen-deficient films exhibit significant ER (-22% at 260 K, 0.3 mA).
- ER is strongly correlated with residual resistivity and grain boundary properties.
- MR shows current-dependent behavior, further highlighting grain boundary influence.
- Oxygen content is tunable, impacting ER and residual resistivity.
Conclusions:
- Oxygen deficiency is a key factor in achieving large ER effects in these films.
- Grain boundaries play a crucial role in the observed ER and MR phenomena.
- The findings suggest potential for oxide films in memristive devices and neuomorphic computing.
