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Electric Field-Tunable Structural Phase Transitions in Monolayer Tellurium
Jinjin Wang1, Hong Shen1, Zhiyuan Yu1
1Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China.
Monolayer tellurium (Te) exhibits tunable electronic properties under electric fields. Its band gaps can be modified, showing potential for nanoscale electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Quantum Chemistry
Background:
- Monolayer materials are crucial for next-generation electronics.
- Tellurium (Te) is a promising material with unique electronic properties.
Purpose of the Study:
- Investigate the electronic properties of monolayer tellurium under external electric fields.
- Explore the impact of electric fields on band gaps and atomic structures.
Main Methods:
- First-principles calculations were employed.
- Three atomic configurations (α-Te, β-Te, γ-Te) were analyzed.
Main Results:
- α-Te and γ-Te possess indirect band gaps; β-Te is a direct semiconductor without an electric field.
- Structural transformations and chirality changes occur in α- and γ-Te under specific electric fields.
- Perpendicular electric fields tune band gaps, approaching 0 eV at critical strengths.
Conclusions:
- Monolayer tellurium's electronic properties are highly tunable via electric fields.
- Significant potential exists for monolayer tellurium in designing nanoscale electronic devices.
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