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Related Experiment Video

Updated: Dec 13, 2025

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64Gb/s PAM4 and 160Gb/s 16QAM modulation reception using a low-voltage Si-Ge waveguide-integrated APD.

Jin Zhang, Bill Ping-Piu Kuo, Stojan Radic

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    |August 6, 2020
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    Summary
    This summary is machine-generated.

    We developed silicon-germanium avalanche photodiodes (APDs) integrated with waveguides. These APDs achieve high responsivity and bandwidth, enabling advanced data transmission formats without digital signal processing.

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    Area of Science:

    • Optoelectronics
    • Semiconductor devices
    • Photonics

    Background:

    • High-speed optical communication systems require efficient and sensitive photodetectors.
    • Silicon-germanium (SiGe) alloys offer a promising material for photodetector fabrication due to their tunable bandgap and compatibility with silicon photonics.

    Purpose of the Study:

    • To demonstrate waveguide-integrated silicon-germanium avalanche photodiodes (SiGe APDs).
    • To evaluate the performance of these SiGe APDs in high-speed optical communication systems.

    Main Methods:

    • Fabrication of waveguide-integrated SiGe avalanche photodiodes.
    • Characterization of photodiode responsivity and bandwidth.
    • Testing of the APDs using intensity-modulation-direct-detection (IMDD) and coherent detection with higher-order modulation formats (32 Gbaud PAM-4 and 40 Gbaud 16QAM).

    Main Results:

    • Achieved a maximum responsivity of 15.2 A/W at 16x avalanche gain.
    • Demonstrated a bandwidth of 33 GHz.
    • Successfully received 32 Gbaud PAM-4 and 40 Gbaud 16QAM signals without digital signal processing.

    Conclusions:

    • Waveguide-integrated SiGe APDs are suitable for high-speed optical communication.
    • The demonstrated APDs can handle advanced modulation formats, simplifying receiver architectures.