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Tri-layer gradient and polarization-selective vertical couplers for interlayer transition.

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    Summary
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    We developed a novel tri-layer vertical coupler on silicon nitride (Si3N4) for 2 µm band applications. This design achieves ultra-low loss and crosstalk, enhancing fabrication tolerance for large-scale photonic circuits.

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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science

    Background:

    • Silicon nitride (Si3N4) platforms are crucial for integrated photonics.
    • Efficient vertical couplers are needed for multilayer photonic circuits.

    Purpose of the Study:

    • To demonstrate and optimize a tri-layer vertical coupler for Si3N4 multilayer platforms at the 2 µm band.
    • To improve performance metrics like transition loss, crosstalk, and fabrication tolerance.

    Main Methods:

    • Design and simulation of a tri-layer vertical coupler with a gradient structure.
    • Optimization of coupler dimensions for enhanced fabrication tolerance.
    • Integration with mode selectivity and arrayed waveguide gratings (AWGs).

    Main Results:

    • Achieved 0.31 dB transition loss and -59.3 dB multi-layer crosstalk at 1950 nm.
    • Increased fabrication tolerance by 61% and 56% through width optimization.
    • Demonstrated mode selectivity with < 15 dB extinction ratio and integrated AWGs.

    Conclusions:

    • The optimized tri-layer vertical coupler offers superior performance for Si3N4 multilayer platforms.
    • This design enhances fabrication feasibility and opens avenues for complex photonic integrated circuits.
    • The proposed couplers are suitable for large-scale photonic integration and diverse photonic devices.