Related Experiment Video
Updated: Dec 12, 2025

Fabrication Procedures and Birefringence Measurements for Designing Magnetically Responsive Lanthanide Ion Chelating Phospholipid Assemblies
Published on: January 3, 2018
Bright-light detector control emulates the local bounds of Bell-type inequalities
Shihan Sajeed1,2,3,4, Nigar Sultana5,6, Charles Ci Wen Lim7,8
1Institute for Quantum Computing, University of Waterloo, Waterloo, ON, N2L 3G1, Canada. shihan.sajeed@gmail.com.
Abstract:
It is well-known that no local model-in theory-can simulate the outcome statistics of a Bell-type experiment as long as the detection efficiency is higher than a threshold value. For the Clauser-Horne-Shimony-Holt (CHSH) Bell inequality this theoretical threshold value is [Formula: see text]. On the other hand, Phys. Rev. Lett. 107, 170404 (2011) outlined an explicit practical model that can fake the CHSH inequality for a detection efficiency of up to 0.5. In this work, we close this gap. More specifically, we propose a method to emulate a Bell inequality at the threshold detection efficiency using existing optical detector control techniques. For a Clauser-Horne-Shimony-Holt inequality, it emulates the CHSH violation predicted by quantum mechanics up to [Formula: see text]. For the Garg-Mermin inequality-re-calibrated by incorporating non-detection events-our method emulates its exact local bound at any efficiency above the threshold. This confirms that attacks on secure quantum communication protocols based on Bell violation is a real threat if the detection efficiency loophole is not closed.
More Related Videos
09:23Quantum State Engineering of Light with Continuous-wave Optical Parametric Oscillators
Published on: May 30, 2014
08:22Calibration-free In Vitro Quantification of Protein Homo-oligomerization Using Commercial Instrumentation and Free, Open Source Brightness Analysis Software
Published on: July 17, 2018
Related Concept Videos
Difference from Background: Limit of Detection
The LOD indicates the presence or absence...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Diode: Forward bias
The behavior of a diode in forward bias...