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Published on: May 3, 2019
Charge transfer via deep hole in the J51/N2200 blend
Xiaoyu Xie1, Chunfeng Zhang2, Haibo Ma1
1School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China.
Abstract:
In recently developed non-fullerene acceptor (NFA) based organic solar cells (OSCs), both the donor and acceptor parts can be excited by absorbing light photons. Therefore, both the electron transfer and hole transfer channels could occur at the donor/acceptor interface for generating free charge carriers in NFA based OSCs. However, in many molecular and DNA systems, recent studies revealed that the high charge transfer (CT) efficiency cannot be reasonably explained by a CT model with only highest occupied molecular orbitals (HOMOs) and lowest unoccupied molecular orbitals (LUMOs) of donor and acceptor molecules. In this work, taking an example of a full-polymer blend consisting of benzodithiophene-alt-benzotriazole copolymers (J51) as donor and naphthalene diimide-bithiophene (N2200) as acceptor, in which the ultrafast hole transfer has been recently reported, we investigate its CT process and examine the different roles of various frontier molecular orbitals (FMOs). Through a joint study of quantum mechanics electronic structure calculation and nonadiabatic dynamics simulation, we find that the hole transfer between HOMOs of J51 and N2200 can hardly happen, but the hole transfer from HOMO of N2200 to HOMO - 1 of J51 is much more efficient. This points out the underlying importance of the deep hole channel in the CT process and indicates that including FMOs other than HOMOs and LUMOs is highly necessary to build a robust physical model for studying the CT process in molecular optoelectronic materials.
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