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P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Colloidal Quantum Dot Bulk Heterojunction Solids with Near-Unity Charge Extraction Efficiency.

Min-Jae Choi¹, Se-Woong Baek^1,2, Seungjin Lee¹

¹Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto ON M5S 3G4 Canada.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|August 11, 2020

Summary

This summary is machine-generated.

Colloidal quantum dots (CQDs) enable efficient infrared light harvesting with new bulk heterojunction solids. This strategy overcomes thickness limitations for improved optoelectronic device performance.

Keywords:

bulk heterojunctions colloidal quantum dots doping infrared optoelectronics light harvesting

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Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Colloidal quantum dots (CQDs) offer tunable optoelectronic properties and solution processability.
Large-diameter CQDs absorb infrared (IR) light but require thick films, hindering carrier extraction and device efficiency.

Purpose of the Study:

To develop CQD bulk heterojunction solids with extended carrier transport length for efficient IR light harvesting.
To overcome the limitations of thick IR CQD films in optoelectronic devices.

Main Methods:

Devised an in-solution doping strategy for large-diameter CQDs, controlling doping, energetic configuration, and size homogeneity.
Manipulated the hetero-offset between n-type and p-type CQDs to create distinct carrier extraction pathways.

Main Results:

Demonstrated CQD bulk heterojunction solids enabling efficient IR light harvesting with extended carrier transport.
Achieved active layers exceeding 700 nm thickness without compromising device performance (open-circuit voltage and fill factor).
Documented >90% charge extraction efficiency across the UV to IR range (350-1400 nm).

Conclusions:

The developed strategy enables efficient IR light harvesting using thick CQD films.
This advancement is crucial for high-performance optoelectronic devices utilizing the infrared spectrum.