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10B Conformal Doping for Highly Efficient Thermal Neutron Detectors.
Siddartha S Nandagopala Krishnan1, Carlos Avila-Avendano1, Zeshaan Shamsi1
1Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, Dallas, United States.
This study introduces a novel boron-10 doping method for silicon diodes, significantly boosting neutron detection efficiency to 21% for microstructured devices compared to planar detectors.
Area of Science:
- Semiconductor device physics
- Nuclear instrumentation
Background:
- Traditional planar detectors have limitations in neutron detection efficiency.
- Microstructured silicon diodes offer potential for improved performance.
Purpose of the Study:
- To develop a conformal doping strategy for microstructured silicon diodes.
- To enhance neutron detection efficiency using enriched Boron-10 (¹⁰B).
Main Methods:
- Utilized Monte-Carlo nuclear particle (MCNP) code simulations for efficiency calculations.
- Implemented a high-temperature anneal in ¹⁰B-filled diodes for sidewall doping.
- Fabricated microstructured silicon diodes with conformal p⁺ layer.
Main Results:
- Achieved a thermal neutron detection efficiency of approximately 21% in microstructured diodes.
- Demonstrated significantly higher efficiency compared to planar detectors (∼3.5%).
- Observed lower leakage current due to conformal doping.
Conclusions:
- The conformal ¹⁰B doping strategy is effective for enhancing neutron sensitivity in microstructured silicon diodes.
- This method provides a pathway for developing next-generation neutron detectors with superior performance.
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