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Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

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Direct Structural Identification and Quantification of the Split-Vacancy Configuration for Implanted Sn in Diamond.

U Wahl^1,2, J G Correia², R Villarreal¹

¹KU Leuven, Quantum Solid-State Physics, 3001 Leuven, Belgium.

Physical Review Letters

|August 16, 2020

Summary

This summary is machine-generated.

The tin-vacancy (SnV) center in diamond forms an ideal split-vacancy structure upon implantation. This defect exhibits excellent optical properties, making it promising for single photon emission applications.

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Area of Science:

Materials Science
Quantum Optics
Solid State Physics

Background:

The tin-vacancy (SnV) center in diamond is a promising defect for quantum applications.
Understanding its formation mechanism and atomic structure is crucial for optimizing its properties.
Previous studies have suggested potential configurations, but direct identification was lacking.

Purpose of the Study:

To demonstrate the formation of the ideal split-vacancy configuration of the Sn-vacancy center in diamond.
To quantify the efficiency of this formation mechanism upon implantation.
To investigate the structural evolution upon thermal annealing and its optical properties.

Main Methods:

Low fluence 121Sn implantation into natural diamond at the ISOLDE facility at CERN.
Utilized beta- emission channeling to directly identify and quantify atomic configurations of Sn-related centers.
Photoluminescence spectroscopy to characterize optical properties and linewidth.

Main Results:

The ideal split-vacancy configuration of the Sn-vacancy center forms with high efficiency (≈40%) immediately upon implantation.
Thermal annealing at 920°C resulted in ≈30% of Sn occupying the ideal bond-center position.
Photoluminescence showed the characteristic SnV- line at 621 nm with an exceptionally narrow ensemble linewidth (2.3 nm).

Conclusions:

The Sn-vacancy center exhibits a remarkably simple and efficient structural formation mechanism.
Its exceptional optical properties, including narrow linewidth, further establish its potential for single photon emission.
These findings pave the way for advanced quantum technologies utilizing diamond-based defects.