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Related Experiment Video

Updated: Dec 11, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

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Published on: May 29, 2018

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures.

Shanquan Chen¹, Shuai Yuan¹, Zhipeng Hou^2,3

¹School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China.

Advanced Materials (Deerfield Beach, Fla.)

|August 21, 2020

Summary

Topological spin and polar structures in ferroic thin films are crucial for next-generation electronics. Research highlights their observation and control for advanced spintronic and nanoelectronic devices.

Keywords:

ferroelectrics heterostructures magnetic materials multiferroics thin films topological structures

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Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Topological spin/polar structures in ferroic materials are key for advanced electronic devices.
Recent progress in theory, thin-film synthesis, and characterization drives innovation.

Purpose of the Study:

To explore the last decade of research on topological structures in ferroic thin films and heterostructures.
To review the observation and control of these structures and their emergent phenomena.

Main Methods:

Review of theoretical calculations and experimental synthesis of high-quality thin films.
Analysis of characterization techniques for emergent phenomena and exotic phases.
Investigation of control mechanisms including epitaxial strain, layer thickness, and fields.

Main Results:

Discussion of topological spin structures (e.g., magnetic skyrmions) and functionalities (e.g., topological Hall effect).
Exploration of polar topologies (e.g., domain walls, vortices, skyrmions) in ferroelectric films.
Summary of progress in controlling topological structures and their properties.

Conclusions:

Topological structures in ferroic materials offer significant potential for nonvolatile memories and energy-efficient devices.
Continued research in this area is expected to yield further breakthroughs in nanoelectronics and spintronics.