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Structural Property Study for GeSn Thin Films.

Liyao Zhang1, Yuxin Song2, Nils von den Driesch3,4

  • 1Department of Physics, University of Shanghai for Science and Technology, Shanghai 200093, China.

Materials (Basel, Switzerland)
|August 23, 2020
PubMed
Summary
This summary is machine-generated.

Structural properties of Germanium-Tin (GeSn) thin films were analyzed. Threading dislocations were observed in MBE-grown films, unlike CVD-grown ones, potentially explaining poor optical properties.

Keywords:
GeSnXRDstructural property

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Germanium-Tin (GeSn) alloys are promising for optoelectronic applications.
  • Understanding structural properties is crucial for optimizing GeSn film growth.
  • Growth methods like molecular beam epitaxy (MBE) and chemical vapor deposition (CVD) yield different structural characteristics.

Purpose of the Study:

  • To analyze the structural properties of GeSn thin films grown by MBE and CVD.
  • To investigate the impact of Sn concentration, thickness, and growth method on film quality.
  • To identify structural defects and their correlation with optical properties.

Main Methods:

  • High-resolution X-ray diffraction (HRXRD) for analyzing crystal structure and strain.
  • Cross-sectional transmission electron microscopy (TEM) for direct imaging of defects.
  • Reciprocal space mapping (RSM) to study lattice relaxation and orientation.

Main Results:

  • GeSn films grown on Ge (001) by MBE and Ge-buffered Si (001) by CVD were characterized.
  • HRXRD and TEM revealed differences in structural quality and defect types between MBE and CVD growth.
  • Threading dislocations were present in MBE-grown GeSn layers but absent in CVD-grown layers.

Conclusions:

  • The presence of threading dislocations in MBE-grown GeSn films is a key structural difference compared to CVD-grown films.
  • Point defects and dislocations are identified as potential contributors to the poor optical properties of MBE-grown GeSn alloys.
  • CVD appears to be a more suitable method for growing high-quality GeSn films with fewer structural defects for optoelectronic applications.