Stochastic Power Consumption Model of Wireless Transceivers

Paweł Kryszkiewicz1, Adrian Kliks1, Łukasz Kułacz1

  • 1Institute of Radiocommunications, Poznan University of Technology, 61-131 Poznan, Poland.

Summary

This study introduces a novel stochastic energy consumption model for wireless transceivers. By treating model parameters as random variables, it enhances accuracy for network design and energy efficiency assessments.

Related Concept Videos

The Maximum Power Transfer Theorem01:20

The Maximum Power Transfer Theorem

Consider a linear AC Thevenin equivalent circuit connected to a load impedance.
The load connected draws the current, and the circuit delivers the power to the load. The alternating current flowing through the load is determined using the rectangular form of voltages, currents, network impedance, and load impedance. The average power delivered to the load is obtained from the product of the square of current and load resistance.
1.0K
Maximum Power Transfer01:16

Maximum Power Transfer

Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
706
The Power Superposition Principle01:19

The Power Superposition Principle

Consider a circuit with two sinusoidal voltage sources. Each one influences the circuit independently, and the superposition principle helps us understand the combined effect by adding up the responses from each source.
309
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
672
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.1K
Small-signal Diode Model01:18

Small-signal Diode Model

In analyzing the behavior of diodes in circuits, the relationship between the current through a diode and the voltage across it is of particular interest, especially when considering the effect of a direct current (DC) bias voltage. When applied, this DC bias influences the diode's operating point, known as the Q point, around which the current-voltage (I-V) characteristic of the diode exhibits exponential behavior. Introducing a small, time-varying signal on top of this bias aids in examining...
1.4K