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Published on: March 24, 2019
The Magnetic Proximity Effect Induced Large Valley Splitting in 2D InSe/FeI2 Heterostructures
Yifeng Lin1, Changcheng Zhang2, Lixiu Guan2
1School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China.
Abstract:
The manipulation of valley splitting has potential applications in valleytronics, which lacks in pristine two-dimensional (2D) InSe. Here, we demonstrate that valley physics in InSe can be activated via the magnetic proximity effect exerted by ferromagnetic FeI2 substrate with spin-orbit coupling. The valley splitting energy can reach 48 meV, corresponding to a magnetic exchange field of ~800 T. The system also presents magnetic anisotropy behavior with its easy magnetization axis tunable from in-plane to out-of-plane by the stacking configurations and biaxial tensile strain. The d-orbital-resolved magnetic anisotropic energy contributions indicate that the tensile strain effect arises from the increase of hybridization between minority Fe d and dx2-y2 states. Our results reveal that the magnetic proximity effect is an effective approach to stimulate the valley properties in InSe to extend its spintronic applications, which is expected to be feasible in other group-III monochalcogenides.
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