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Crystal Growth: Principles of Crystallization01:25

Crystal Growth: Principles of Crystallization

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Crystallization is a phase transformation process in which crystals are precipitated from a supersaturated solution or formed from other sources. During crystallization, atoms or molecules arrange themselves into a well-defined, rigid crystal lattice to minimize energy.
Initiating crystallization involves manipulating the concentration of the solute and the temperature of the solution. Since crystal growth occurs when the ratio of concentration and solubility of the solute in the solvent...
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Related Experiment Video

Updated: Dec 11, 2025

A Microfluidic Approach for the Study of Ice and Clathrate Hydrate Crystallization
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Liquid to crystal Si growth simulation using machine learning force field.

Ling Miao1, Lin-Wang Wang2

  • 1School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.

The Journal of Chemical Physics
|August 24, 2020
PubMed
Summary
This summary is machine-generated.

Machine learning force fields (ML-FF) accurately simulate far-from-equilibrium silicon crystal growth. This study introduces a bias correction for ML-FF training, crucial for accurate transition temperature predictions.

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Area of Science:

  • Computational Materials Science
  • Materials Physics
  • Machine Learning Applications

Background:

  • Machine learning force fields (ML-FF) offer ab initio accuracy for large-scale material simulations.
  • Current ML-FF applications are primarily limited to systems near equilibrium ground states.
  • Simulating far-from-equilibrium phenomena remains a significant challenge in materials science.

Purpose of the Study:

  • To investigate the application of ML-FF for simulating far-from-equilibrium liquid to crystal silicon (Si) growth.
  • To assess the accuracy of ML-FF in reproducing ab initio simulation results for Si growth dynamics.
  • To compare ML-FF simulations with classical force fields and address potential training biases.

Main Methods:

  • Development and application of an ML-FF based on ab initio decomposed atomic energy.
  • Simulation of liquid to crystal Si growth under far-from-equilibrium conditions.
  • Comparison of ML-FF results with Stillinger-Weber classical force field simulations.
  • Implementation of a procedure to correct systematic fitting bias in ML-FF training.

Main Results:

  • The developed ML-FF successfully reproduced all aspects of ab initio simulated Si growth.
  • Accurate prediction of local energy fluctuations, transition temperatures, diffusion constants, and growth rates.
  • Significant discrepancies observed between ML-FF and Stillinger-Weber classical force field simulations.
  • The bias correction procedure was shown to be critical for accurate transition temperature determination.

Conclusions:

  • ML-FFs are highly effective for simulating complex, far-from-equilibrium material growth processes like Si crystallization.
  • The proposed bias correction method enhances the reliability and accuracy of ML-FFs for critical thermodynamic properties.
  • ML-FFs provide a superior alternative to classical force fields for detailed investigations of non-equilibrium material phenomena.