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Chemical synthesis and optical, structural, and surface characterization of InP-In2O3 quantum dots.

D A Granada-Ramirez1, J S Arias-Cerón2, M Pérez-González3,4

  • 1Departamento de Física, Cinvestav-IPN, Av. Instituto Politécnico Nacional 2508, Col. San Pedro Zacatenco, C.P. 07360 Ciudad de México, Mexico.

Applied Surface Science
|August 25, 2020
PubMed
Summary

This study explores how tris(trimethylsilyl)phosphine concentration affects Indium Phosphide-Indium Oxide (InP-In2O3) colloidal quantum dots (QDs). Higher concentrations yield larger QDs with tunable band gaps from 2.0 to 2.9 eV.

Keywords:
In2O3InPPhotoluminescenceQuantum dotsXPSXRD

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Quantum Dot Synthesis

Background:

  • Colloidal quantum dots (QDs) offer tunable optoelectronic properties.
  • Controlling QD size and composition is crucial for specific applications.
  • Indium Phosphide (InP) and Indium Oxide (In2O3) heterostructures are promising for advanced materials.

Purpose of the Study:

  • Investigate the synthesis of InP-In2O3 colloidal QDs using a one-pot method.
  • Determine the impact of tris(trimethylsilyl)phosphine (P(TMS)3) precursor concentration on QD properties.
  • Establish structure-property relationships for controlled QD fabrication.

Main Methods:

  • One-pot chemical synthesis of InP-In2O3 QDs.
  • UV-Vis spectrophotometry and photoacoustic spectroscopy for optical absorption.
  • Photoluminescence spectroscopy for emission properties.
  • High-resolution transmission electron microscopy (HR-TEM) for size and shape analysis.
  • X-ray photoelectron spectroscopy (XPS) for surface chemistry and phase confirmation.

Main Results:

  • Increased P(TMS)3 concentration led to a red-shift in absorption spectra.
  • Tunable band gap energy observed between 2.0 and 2.9 eV.
  • Broad-band emission from 2.0 to 2.9 eV correlated with excitonic transitions.
  • HR-TEM confirmed In2O3 QD diameters of 8-10 nm and InP QD diameters of 6-9 nm.
  • XPS verified the presence of InP and In2O3 phases.

Conclusions:

  • P(TMS)3 precursor concentration is a key factor in controlling InP-In2O3 QD size, shape, and optical properties.
  • The one-pot synthesis method allows for effective tuning of QD band gaps.
  • These findings enable the rational design of InP-In2O3 QDs for tailored optoelectronic applications.