Low-Cost Microbolometer Type Infrared Detectors.

Area of Science:

• Materials Science
• Electrical Engineering
• Optics

Background:

• Complementary metal oxide semiconductor (CMOS) microbolometers present a low-cost solution for long-wave infrared (LWIR) imaging.
• CMOS-compatible microbolometer infrared focal plane arrays (IRFPAs) integrate standard CMOS processes with micro-electro-mechanical systems (MEMS).
• Technological progress has narrowed the performance gap between commercial CMOS microbolometers and established technologies.

Purpose of the Study:

• To review the fundamental principles of CMOS-compatible microbolometer IRFPAs.
• To highlight recent advancements in CMOS microbolometer technology for LWIR imaging.
• To provide a comprehensive overview of key components and packaging.

Main Methods:

• Review of pixel structure designs in CMOS microbolometers.
• Analysis of read-out integrated circuit (ROIC) architectures for IRFPAs.
• Examination of focal plane array configurations and integration.
• Discussion of vacuum packaging techniques for enhanced performance.

Main Results:

• CMOS microbolometers offer a viable, cost-effective alternative for LWIR imaging applications.
• The integration of MEMS with CMOS processes enables high-performance IRFPAs.
• Performance metrics of commercial CMOS microbolometers are approaching those of non-CMOS counterparts.
• Key areas of advancement include pixel design, ROIC efficiency, and packaging.

Conclusions:

• CMOS microbolometer technology is a mature and increasingly competitive option for LWIR imaging.
• The synergy between CMOS and MEMS processes drives innovation in IRFPAs.
• Continued development in pixel, ROIC, and packaging technologies promises further performance gains.