Strange semimetal dynamics in SrIrO3
1Institut für Quantenmaterialien und -technologien, Karlsruher Institut für Technologie, 76021, Karlsruhe, Germany.
Nature Communications
|August 28, 2020
Summary
This study reveals that strontium iridate (SrIrO3) exhibits unusual charge dynamics, behaving like a marginal Fermi liquid. This quantum material
Area of Science:
- Quantum materials science
- Condensed matter physics
- Solid-state chemistry
Background:
- Quantum materials exhibit novel states due to electronic correlations, multi-orbital excitations, and spin-orbit coupling.
- Investigating charge dynamics in materials with varying charge carrier mobilities presents a significant challenge.
Purpose of the Study:
- To investigate the charge dynamics of semimetallic strontium iridate (SrIrO3) using polarized Raman scattering.
- To analyze the electronic continuum and extract key parameters like scattering rate and mass enhancement.
Main Methods:
- Utilized polarized Raman scattering to probe electronic excitations in SrIrO3.
- Applied a memory function formalism to analyze the frequency-dependent scattering rate and mass enhancement.
- Compared extracted DC-mobilities and electrical resistivities with existing transport measurements.
Main Results:
- Observed an electronic continuum in Raman responses for both holes and electrons, extending beyond typical Fermi liquid predictions.
- Extracted frequency-dependent scattering rates and mass enhancements, confirming marginal Fermi liquid behavior.
- Determined DC-mobilities and electrical resistivities consistent with transport data.
Conclusions:
- The charge dynamics of SrIrO3 are well-described by marginal Fermi liquid phenomenology.
- The scattering rate approaches the Planckian limit, indicating strong electron-electron interactions.
- Raman scattering is a powerful technique for studying charge dynamics in complex multi-band systems.
Related Concept Videos
02:42Valence Bond Theory
10.7K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
10.7K
01:27Biasing of Metal-Semiconductor Junctions
458
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
458
01:24Metal-Semiconductor Junctions
756
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
756
01:22Semiconductors
1.2K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.2K
03:51Molecular Orbital Theory II
25.8K
Molecular Orbital Energy Diagrams
25.8K
02:58Properties of Transition Metals
28.8K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
28.8K