Ultrasensitive UV Photodetector Based on Interfacial Charge-Controlled Inorganic Perovskite-Polymer Hybrid Structure

In this work, we demonstrate an ultrasensitive, visible-blind ultraviolet (UV) photodetector based on perovskite-polymer hybrid structure. A novel wide-band-gap vacancy-ordered lead-free inorganic perovskite Cs₂SnCl₆ with Nd³⁺ doping is employed in the active layer of this hybrid photodetector. Remarkably, with interfacial charge-controlled hole-injection operating mechanism, our device achieves a maximum detectivity of 6.3 × 10¹⁵ Jones at 372 nm, fast photoresponse speed with rise time and fall time in the order of milliseconds, and a large linear dynamic range of 118 dB. The performance is significantly better than most of the existing organic and inorganic semiconductor UV photodetectors reported so far, and its detectivity is close to 1 order of magnitude higher than that of the photomultiplication tube (PMT) in the UV region. In addition, the photodetector demonstrated excellent environmental stability, which is critical for commercial deployment of perovskite-based optoelectronic devices. The results presented in this work open a new route toward development of high-performance optoelectronic devices using perovskite-based hybrid nanomaterial systems.