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Non-Carbon 2D Materials-Based Field-Effect Transistor Biosensors: Recent Advances, Challenges, and Future
Mohammed Sedki1, Ying Chen2, Ashok Mulchandani2
1Department of Materials Science and Engineering, University of California, Riverside, CA 92521, USA.
Field-effect transistors (FETs) utilizing non-carbon 2D materials show great promise for sensitive, real-time biosensing. This review covers their structures, preparation, properties, applications, challenges, and future outlook.
Area of Science:
- Materials Science
- Nanotechnology
- Biomedical Engineering
Background:
- Field-effect transistors (FETs) offer high sensitivity and on-chip integration for biosensing.
- Non-carbon 2D materials are emerging as promising alternatives to graphene in FET biosensors.
Purpose of the Study:
- To review recent advances in non-carbon 2D materials for FET biosensor applications.
- To discuss the structures, preparation, properties, and applications of these materials.
- To explore challenges and future perspectives for non-carbon 2D material-based FET biosensors.
Main Methods:
- Literature review of recent studies on non-carbon 2D materials.
- Analysis of material structures, preparation methods, and properties.
- Evaluation of FET biosensor applications and performance.
Main Results:
- Non-carbon 2D materials like TMDCs, h-BN, BP, and metal oxides exhibit significant potential for FET biosensing.
- These materials offer tunable electronic properties suitable for various sensing applications.
- Recent studies highlight advancements in their fabrication and integration into FET devices.
Conclusions:
- Non-carbon 2D materials are key enablers for next-generation FET biosensors.
- Further research is needed to overcome current challenges and fully realize their potential.
- These materials promise enhanced sensitivity, scalability, and on-chip integration for diagnostics.
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