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High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates.

J Aprojanz1, Ph Rosenzweig2, T T Nhung Nguyen1

  • 1Institut für Physik, Technische Universität Chemnitz, Chemnitz 09126, Germany.

ACS Applied Materials & Interfaces
|September 1, 2020
PubMed
Summary

Epitaxial graphene grown on germanium-on-silicon substrates shows metallic properties and high charge carrier mobility. Post-growth annealing further enhances graphene performance for microelectronic applications.

Keywords:
Ge epilayersLEEDSTMSi(100)charge carrier mobilitiesepitaxial graphenephotoemissionsurface transport

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene exhibits unique electronic properties but lacks microelectronic integration.
  • Epitaxial graphene on germanium-on-silicon offers a pathway for CMOS-compatible applications.

Purpose of the Study:

  • To comprehensively study epitaxial graphene grown on Ge(100) on Si(100) substrates.
  • To evaluate its potential for microelectronic applications.

Main Methods:

  • Chemical Vapor Deposition (CVD) for graphene growth.
  • Angle-resolved photoemission spectroscopy (ARPES) for electronic structure analysis.
  • In situ surface transport measurements for carrier mobility assessment.

Main Results:

  • Achieved crystalline graphene monolayers with metallic character.
  • Obtained room-temperature charge carrier mobilities of 1 × 10^4 cm²/Vs, attributed to quasi-charge neutrality.
  • Demonstrated a 30% mobility increase after in situ annealing up to 850 °C.
  • Observed weak graphene-Ge interaction and effective delamination.

Conclusions:

  • Epitaxial graphene on Ge/Si(100) is a promising material for microelectronics.
  • CVD growth and annealing are effective for enhancing graphene quality and performance.
  • The Ge(100)-(2 × 1) surface structure indicates weak van der Waals interaction, facilitating integration.