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Updated: Dec 10, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting
Haikuo Gao1, Jinyu Liu1, Zhengsheng Qin1
1Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China. dhl522@iccas.ac.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
Abstract:
Herein, two kinds of vertical organic optoelectronic devices, vertical organic field-effect transistors (VOFETs) and light-emitting transistors (VOLETs), were constructed based on amorphous organic semiconductors of N,N'-di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine (NPB) as hole injecting and transport layers and tris(8-hydroxy-quinolinato) aluminum (Alq3) as the emitting layer. High device performances with a large on/off ratio of ∼6 × 103, current density of ∼40 mA cm-2, and fast response of ∼5 ms at a frequency of 20 Hz and a brightness of 126 cd m-2 were demonstrated for these two vertical devices with good device stability and repeatability. These results suggest the potential applications of amorphous organic semiconductors with good film-forming characteristics and easy device fabrication ability in vertical optoelectronic circuits.
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