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Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films
Hyo-Jun Joo1, Dae-Hwan Kim1, Hyun-Seok Cha1
1School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea.
Abstract:
We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.
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