High power and high pulse repetition frequency transistorized pulser by time base stability improvement and power...

Output power of a transistorized pulser is usually limited by the power capacity of avalanche transistors. To improve the total output power, the power synthesis method is widely used, in which a single pulser with high output power and high time base stability is required. However, the time base stability tends to deteriorate as the output power increases. To improve the output power under the premise of high time base stability, from the perspective of carrier movement, the mechanisms of pulse jitter and pulse drift are investigated. It is found that the pulse jitter is caused by time dispersion of the ionization process in the collector depletion region, while the pulse drift is due to the decrement of the diffusion coefficient D_n and the electron mobility μ_n, which are both temperature-dependent. Based on the microscopic theoretical study, some macroscopic improvements on the time base stability are made. Some parameters of the trigger pulse and the circuit (e.g., charging capacitance) are optimized experimentally. Consequently, we achieved a pulser with an amplitude of 1.8 kV, pulse jitter of 25 ps, pulse drift of 100 ps/min at a pulse repetition frequency (PRF) of 100 kHz. Additionally, a new parameter k, the product of the highest PRF f and the peak power E_p, is defined to evaluate the output power. With almost the same time base stability, the proposed pulser has a k of 6.48 GHz W, which is improved significantly. Finally, a synthesized pulser with an amplitude of 2.5 kV and highest PRF of 100 kHz is achieved.