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Pulse-duration dependence of laser-induced modifications inside silicon
Optics Express
|September 10, 2020
Summary
Ultrafast infrared lasers enable 3D silicon microdevice fabrication. Optimal modification requires specific pulse durations (minimum 5.4 ps) and numerical apertures (0.85), crucial for reproducible results.
Area of Science:
- Materials Science
- Laser Physics
- Nanotechnology
Background:
- Ultrafast infrared lasers offer potential for direct 3D silicon microdevice fabrication.
- Strong nonlinearities in narrow-gap materials limit modification with short laser pulses.
Purpose of the Study:
- To determine the critical threshold conditions for initiating modifications in silicon using ultrafast infrared lasers.
- To investigate the influence of pulse duration and numerical aperture on silicon modification.
Main Methods:
- Experimentally varying laser pulse duration (4-21 ps) and focusing numerical aperture.
- Analyzing the conditions required to initiate material modifications in silicon.
Main Results:
- A minimum pulse duration of 5.4 ps and a numerical aperture of 0.85 are necessary for successful silicon modification.
- While energy thresholds show modest dependence on pulse duration, reproducibility varies significantly across tested durations.
Conclusions:
- Establishes critical pulse duration and numerical aperture thresholds for 3D silicon microfabrication.
- Provides essential guidelines for optimizing internal silicon structuring with ultrafast lasers, complementing femtosecond and nanosecond regime data.
