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Propagation Induced Dephasing in Semiconductor High-Harmonic Generation.

Isak Kilen1, Miroslav Kolesik1, Jorg Hader1

  • 1Wyant College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, Arizona 85721, USA.

Physical Review Letters
|September 10, 2020
PubMed
Summary

Propagation effects significantly alter high-harmonic generation in semiconductors. Increased sample length causes dephasing, reducing emission plateau height and necessitating short decay times for accurate analysis.

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Area of Science:

  • Solid-state physics
  • Quantum optics
  • Nonlinear optics

Background:

  • High-harmonic generation (HHG) in semiconductors is a key phenomenon for exploring light-matter interactions.
  • Understanding the impact of experimental conditions on HHG spectra is crucial for accurate interpretation.
  • Previous studies have not fully accounted for propagation effects in semiconductor HHG.

Purpose of the Study:

  • To investigate the influence of pulse propagation on nonperturbative high-harmonic features in semiconductors.
  • To elucidate the role of sample length in modifying high-harmonic emission.
  • To provide a microscopic understanding of propagation-induced dephasing.

Main Methods:

  • A fully microscopic theoretical approach was employed.
  • Simulations considered the interaction of long-wavelength strong laser pulses with semiconductor materials.
  • The study analyzed the effects of varying sample lengths relative to the light wavelength.

Main Results:

  • Propagation effects act as a strong dephasing mechanism in semiconductor HHG.
  • For sample lengths exceeding the excitation wavelength, emission plateau height is reduced significantly (up to six orders of magnitude).
  • This propagation-induced dephasing is a critical factor in experimental observations.

Conclusions:

  • Pulse propagation is a dominant factor influencing HHG spectra in extended semiconductor samples.
  • The observed reduction in emission plateau height is explained by propagation-induced dephasing.
  • Extremely short polarization decay times are required for quantitative analysis of experimental HHG data from semiconductors.