Perovskite Core-Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation

Area of Science:

• Materials Science
• Nanoscience
• Electronics

Background:

• Halide perovskite electronics face limitations in charge transport and stability.
• Cesium lead bromide (CsPbBr3) nanowires (NWs) are promising but require improved performance.
• Existing methods struggle to overcome inherent material weaknesses.

Purpose of the Study:

• To achieve effective surface charge transfer doping of CsPbBr3 NWs.
• To enhance the charge transport properties and stability of perovskite nanowire devices.
• To investigate the impact of molybdenum trioxide (MoO3) surface functionalization.

Main Methods:

• Vapor-liquid-solid (VLS) growth of single-crystalline CsPbBr3 NWs.
• Surface functionalization of CsPbBr3 NWs with a 10 nm MoO3 shell.
• Fabrication of NW devices for electrical and photodetection measurements.

Main Results:

• Achieved a 15× increase in field-effect hole mobility (μh) from 1.5 to 23.3 cm2/(V s).
• Demonstrated superior responsivity (R) up to 2.36 × 10^3 A/W and EQE over 5.48 × 10^5% for photodetection.
• MoOx shell provided surface passivation, enhancing air stability by minimizing water and oxygen diffusion.

Conclusions:

• Surface doping via MoO3 functionalization is an enabling technology for low-dimensional halide perovskites.
• High-mobility and air-stable perovskite field-effect transistors (FETs) and photodetectors are realized.
• This approach overcomes critical limitations in charge transport and device longevity.