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High Thermoelectric Power Factor of Poly(3-hexylthiophene) through In-Plane Alignment and Doping with a Molybdenum
Viktoriia Untilova1, Jonna Hynynen2, Anna I Hofmann2
1CNRS, ICS UPR 22, Université de Strasbourg, F-67000 Strasbourg, France.
Macromolecules
|September 11, 2020
Summary
Researchers achieved a record thermoelectric power factor in poly(3-hexylthiophene) (P3HT) through high-temperature rubbing and a specific p-dopant. This demonstrates P3HT
Area of Science:
- Materials Science
- Organic Electronics
- Thermoelectrics
Background:
- Conjugated polymers offer potential for low-cost thermoelectric devices.
- Optimizing thermoelectric properties in polymers like poly(3-hexylthiophene) (P3HT) is crucial for practical applications.
Purpose of the Study:
- To enhance the thermoelectric power factor of poly(3-hexylthiophene) (P3HT).
- To investigate the effects of high-temperature rubbing and p-doping on P3HT's thermoelectric performance.
Main Methods:
- Thin films of P3HT were subjected to high-temperature rubbing.
- A large molybdenum dithiolene p-dopant with high electron affinity was utilized.
- UV-vis-NIR spectroscopy and electrochemical oxidation were used for characterization.
Main Results:
- A record thermoelectric power factor of up to 160 μW m-1 K-2 was achieved for P3HT.
- High-temperature rubbing significantly increased charge-carrier mobility and electrical conductivity along the rubbing direction.
- The doping level was determined to be 10% (one polaron per 10 repeat units).
Conclusions:
- P3HT, when processed with high-temperature rubbing and appropriate doping, exhibits excellent thermoelectric properties.
- The facile synthesis and processability of P3HT make it a promising candidate for thermoelectric applications.
- Further research into P3HT-based thermoelectrics is warranted.
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