Tunable Si Dangling Bond Pathway Induced Forming-Free Hydrogenated Silicon Carbide Resistive Switching Memory Device

With the coming of the big data age, the resistive switching memory (RSM) of three-dimensional (3D) high density shows a significant application in information storage and processing due to its simple structure and size-scalable characteristic. However, an electrical initialization process makes the peripheral circuits of 3D integration too complicated to be realized. Here a new forming-free SiC:H-based device can be obtained by tuning the Si dangling bond conductive channel. It is discovered that the forming-free behavior can be ascribed to the Si dangling bonds in the as-deposited SiC:H films. By tuning the number of Si dangling bonds, the forming-free SiC:H RSM exhibits a tunable memory window. The fracture and connection of the Si dangling bond conduction pathway induces the switching from the high-resistance state (HRS) to the low-resistance state (LRS). Our discovery of forming-free SiC:H resistive switching memory with tunable pathway opens a way to the realization of 3D high-density memory.