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Highly energy-tunable quantum light from moiré-trapped excitons.

H Baek¹, M Brotons-Gisbert², Z X Koong²

¹Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, UK. h.baek@hw.ac.uk b.d.gerardot@hw.ac.uk.

Science Advances

|September 12, 2020

Summary

This summary is machine-generated.

We demonstrate quantum light emission from single moiré-trapped excitons in 2D semiconductors. This confirms their quantum nature and enables tuning for quantum technologies.

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Area of Science:

Quantum optics
Condensed matter physics
Materials science

Background:

Photon antibunching signifies quantum light emission from single emitters.
Two-dimensional (2D) semiconductor heterostructures offer potential for novel quantum light sources.
Moiré potentials in 2D materials are predicted to host arrays of quantum emitters, but their quantum nature requires confirmation.

Purpose of the Study:

To confirm the quantum nature of moiré-trapped excitons in 2D semiconductor heterostructures.
To investigate the optical properties and tunability of these moiré-confined excitons.

Main Methods:

Photon correlation measurements to observe photon antibunching.
Magneto-optical spectroscopy to analyze exciton spectra.
Direct current (DC) Stark tuning to assess exciton energy manipulation.

Main Results:

Observed photon antibunching from single moiré-trapped interlayer excitons, confirming quantum emission.
Demonstrated discrete anharmonic spectra attributed to excitons confined in moiré potentials.
Achieved significant DC Stark tuning (up to 40 meV) due to the large exciton dipole moment.

Conclusions:

Moiré-confined excitons in 2D heterostructures exhibit quantum light emission.
These quantum emitters can be tuned using electric fields, opening avenues for quantum applications.
Further research can explore emitter inhomogeneity and interactions for advanced quantum devices.