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Updated: Dec 9, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Highly energy-tunable quantum light from moiré-trapped excitons
H Baek1, M Brotons-Gisbert2, Z X Koong2
1Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh EH14 4AS, UK. h.baek@hw.ac.uk b.d.gerardot@hw.ac.uk.
We demonstrate quantum light emission from single moiré-trapped excitons in 2D semiconductors. This confirms their quantum nature and enables tuning for quantum technologies.
Area of Science:
- Quantum optics
- Condensed matter physics
- Materials science
Background:
- Photon antibunching signifies quantum light emission from single emitters.
- Two-dimensional (2D) semiconductor heterostructures offer potential for novel quantum light sources.
- Moiré potentials in 2D materials are predicted to host arrays of quantum emitters, but their quantum nature requires confirmation.
Purpose of the Study:
- To confirm the quantum nature of moiré-trapped excitons in 2D semiconductor heterostructures.
- To investigate the optical properties and tunability of these moiré-confined excitons.
Main Methods:
- Photon correlation measurements to observe photon antibunching.
- Magneto-optical spectroscopy to analyze exciton spectra.
- Direct current (DC) Stark tuning to assess exciton energy manipulation.
Main Results:
- Observed photon antibunching from single moiré-trapped interlayer excitons, confirming quantum emission.
- Demonstrated discrete anharmonic spectra attributed to excitons confined in moiré potentials.
- Achieved significant DC Stark tuning (up to 40 meV) due to the large exciton dipole moment.
Conclusions:
- Moiré-confined excitons in 2D heterostructures exhibit quantum light emission.
- These quantum emitters can be tuned using electric fields, opening avenues for quantum applications.
- Further research can explore emitter inhomogeneity and interactions for advanced quantum devices.
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