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Rashba Effect in Functional Spintronic Devices.

Hyun Cheol Koo1,2, Seong Been Kim1,2, Hansung Kim1,2

  • 1Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea.

Advanced Materials (Deerfield Beach, Fla.)
|September 15, 2020
PubMed
Summary
This summary is machine-generated.

The Rashba effect in heterostructures enables electrical control of spin information for advanced electronics. This review covers spin transistors and spin-orbit torque devices, highlighting progress and future directions for integrated spin logic and memory.

Keywords:
Rashba effectspin memoryspin precessionspin transistorsspin-orbit torque

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Area of Science:

  • Spintronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Spin transport enhances electronic device functionality, overcoming speed and power limitations.
  • The Rashba effect at heterostructure interfaces allows electrical control of spin information, crucial for high-performance devices.

Purpose of the Study:

  • To review progress in devices exploiting the Rashba effect, specifically spin transistors and spin-orbit torque devices.
  • To discuss the manipulation of the Rashba effect for future integrated spintronic devices.

Main Methods:

  • Discussion of gate-voltage manipulation of the Rashba effect and spin precession in spin field-effect transistors.
  • Review of theories and experiments on interface-generated spin current in spin-orbit torque devices.

Main Results:

  • Progress in all-electric spin field-effect transistors utilizing the Rashba effect.
  • Advancements in understanding interface-generated spin currents for spin-orbit torque applications.

Conclusions:

  • The Rashba effect is key for developing high-performance spintronic devices.
  • Future research directions focus on fully integrated spin logic and memory devices through Rashba effect manipulation.