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Related Concept Videos

Parallel Resonance01:23

Parallel Resonance

407
The parallel RLC circuit is an arrangement where the resistor (R), inductor (L), and capacitor (C) are all connected to the same nodes and, as a result, share the same voltage across them. The parallel RLC circuit is analyzed in terms of admittance (Y), which reflects the ease with which current can flow. The admittance is given by:
407
Characteristics of Series Resonant Circuit01:24

Characteristics of Series Resonant Circuit

433
Series resonance occurs in a circuit containing inductive (L), capacitive (C), and resistive (R) elements connected sequentially. At the resonance frequency, the inductive and capacitive reactances are equal in magnitude but opposite in sign, effectively canceling each other. This causes the circuit's impedance is minimal, primarily determined by the resistance R. The resonant frequency of an RLC circuit is defined as:
433

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Related Experiment Video

Updated: Dec 9, 2025

Fabrication of Silica Ultra High Quality Factor Microresonators
07:51

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Published on: July 2, 2012

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Greater than one billion Q factor for on-chip microresonators.

Lue Wu, Heming Wang, Qifan Yang

    Optics Letters
    |September 15, 2020
    PubMed
    Summary

    Researchers achieved a record optical quality (Q) factor exceeding 1.1 billion in on-chip optical resonators. This breakthrough using silica whispering-gallery resonators on silicon paves the way for advanced photonic applications.

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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science

    Background:

    • High optical quality (Q) factors are crucial for microcavity performance in nonlinear optics and cavity quantum electrodynamics.
    • Existing on-chip resonators face limitations in achieving ultra-high Q factors.

    Purpose of the Study:

    • To demonstrate a record high Q factor for on-chip optical resonators.
    • To explore the potential of thermal silica on silicon as a resonator material.
    • To measure parametric oscillation thresholds in high-Q devices.

    Main Methods:

    • Fabrication of silica whispering-gallery resonators on silicon substrates.
    • Measurement of Q-factor across C/L bands (100 nm) for various resonator sizes and mode families.
    • Characterization of parametric oscillation threshold in 9 GHz free-spectral-range devices.

    Main Results:

    • Achieved a record Q factor exceeding 1.1 billion for on-chip optical resonators.
    • Demonstrated low parametric oscillation thresholds (< 1 mW) in devices with 9 GHz free-spectral-range.
    • Validated the performance across a broad wavelength range (C/L bands).

    Conclusions:

    • Thermal silica on silicon is a promising material for fabricating high-Q on-chip optical resonators.
    • The demonstrated Q factors and low thresholds enable advanced photonic functionalities.
    • This work advances the development of integrated photonic devices for diverse applications.