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Area of Science:

  • Materials Science
  • Solid-State Electronics
  • Nonvolatile Memory Technology

Background:

  • Selector devices are crucial for nonvolatile memory and neuromorphic computing.
  • Ovonic threshold switching (OTS) devices are favored for scalability but use toxic dopants and complex stoichiometry.
  • There is a need for environmentally friendly and scalable selector technologies.

Purpose of the Study:

  • To develop a high-performance, environmentally friendly selector device.
  • To investigate the potential of earth-abundant sulfide semiconductors for selector applications.
  • To understand the underlying mechanisms responsible for the device's electrical characteristics.

Main Methods:

  • Fabrication of a selector device using amorphous germanium sulfide (GeS).
  • Experimental characterization of electrical properties, including drive current density and nonlinearity.
  • First-principles calculations to elucidate the material structure and electronic properties.

Main Results:

  • Achieved a selector with a large drive current density of 34 MA cm-2.
  • Demonstrated a high nonlinearity of approximately 106.
  • Identified a Ge pyramid-dominated network and high density of near-valence band trap states in amorphous GeS.

Conclusions:

  • Amorphous GeS is a promising material for high-performance, eco-friendly selectors.
  • High drive current is linked to Ge-S covalency; high nonlinearity arises from trap states and field-induced structural changes.
  • This work offers a sustainable alternative to current selector technologies for advanced electronic systems.