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Related Experiment Video

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Analysis of Contact Interfaces for Single GaN Nanowire Devices

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Polytypism in GaAs/GaNAs core-shell nanowires.

M Yukimune¹, R Fujiwara¹, T Mita¹

¹Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama, Ehime 790-8577, Japan.

|September 16, 2020

Summary

The crystal structures of gallium arsenide (GaAs) nanowires were investigated, revealing a decrease in wurtzite (WZ) segments with increased nitrogen in the gallium arsenide nitride (GaNAs) shell. Strain from the GaNAs shell is proposed to induce this polytype change.

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Area of Science:

Materials Science
Nanotechnology
Solid-State Physics

Background:

Gallium arsenide (GaAs) nanowires exhibit zinc-blende (ZB) and wurtzite (WZ) crystal structures.
Understanding polytypism in core-multishell nanowires is crucial for their electronic and optical properties.

Purpose of the Study:

To investigate the crystal structures of GaAs and GaAs/GaNAs/GaAs core-multishell nanowires.
To determine the influence of nitrogen incorporation in GaNAs shells on the ZB/WZ polytypism in GaAs nanowires.

Main Methods:

X-ray diffraction (XRD) for statistical analysis of crystal structure.
Electron backscattered diffraction (EBSD) for microscopic and statistical resolution of polytypism.
Analysis of grain maps and size distribution.

Main Results:

XRD and EBSD confirm the coexistence of ZB and WZ polytypes in all investigated nanowires.
Increasing nitrogen concentration in the GaNAs shell reduces the fraction of WZ segments.
Strain induced by the smaller lattice constant of GaNAs shells is proposed to cause the decrease in WZ polytype.

Conclusions:

The growth of GaNAs shells significantly impacts the polytypism of GaAs nanowires.
Strain engineering is a key factor in controlling the crystal structure of core-multishell nanowires.
Polytype switching occurs along the nanowire length, from WZ to ZB with increasing shell nitrogen content.