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Vertically-Oriented WS2 Nanosheets with a Few Layers and Its Raman Enhancements
Yukyung Shin1, Jayeong Kim2, Yujin Jang2
1Department of Chemistry & Nanoscience, Ewha Womans University, Seoul 03760, Korea.
Nanomaterials (Basel, Switzerland)
|September 19, 2020
Summary
Vertically-oriented tungsten disulfide (WS2) nanosheets were grown on silicon. These WS2 nanosheets show promise as effective substrates for surface-enhanced Raman scattering detection.
Area of Science:
- Materials Science
- Nanotechnology
- Chemistry
Background:
- Two-dimensional (2D) materials offer unique properties for advanced applications.
- Tungsten disulfide (WS2) is a promising 2D material with potential in sensing and electronics.
Purpose of the Study:
- To develop a method for growing vertically-oriented 2D WS2 nanosheets on a silicon substrate.
- To evaluate the performance of these WS2 nanosheets as a surface-enhanced Raman scattering (SERS) substrate.
Main Methods:
- WS2 nanosheets were synthesized via a direct gas-phase chemical reaction between WCl6 and S.
- Growth parameters including temperature, reactant/substrate placement, and gas flow were optimized.
- The synthesized WS2 nanosheets were used to detect rhodamine 6G (R6G) molecules via SERS.
Main Results:
- Vertically-oriented few-layer 2D WS2 nanosheets were successfully grown on Si at 550 °C.
- SERS measurements showed a significant Raman enhancement of R6G molecules up to 9.2 times compared to exfoliated WS2.
- Chemical enhancement via charge transfer from the semiconductor was identified as the enhancement mechanism.
Conclusions:
- Vertically-oriented 2D WS2 nanosheets can be effectively synthesized on Si substrates.
- These WS2 nanosheets demonstrate excellent potential as SERS substrates for sensitive molecule detection.
