Large Magnetoelectric Coupling in the Thin Film of Multiferroic CuO

We report observation of large magnetoelectric coupling in an epitaxial thin film of multiferroic CuO grown on the (100)MgO substrate by the pulsed laser deposition technique. The film is characterized by X-ray diffraction, transmission electron microscopy, and Raman spectrometry. The crystallographic structure of the film turns out to be monoclinic (space group C2/c) with [111]CuO||[100]MgO "out-of-plane" epitaxy and "in-plane" domain structure. The lattice misfit strain is found to vary within ±1-3%. The dc resistivity, magnetization, dielectric spectroscopy, and remanent ferroeletric polarization have been measured across 80-300 K. The dielectric constant is found to decrease by >20% under a moderate magnetic field of ∼18 kOe while the remanent ferroelectric polarization, emerging at the onset of magnetic transition (T _N ∼ 175 K), decreases by nearly 50% under ∼18 kOe field. These results could assume importance as the strain-free bulk CuO does not exhibit magnetoelectric coupling within such magnetic field regime. The strain-induced large magnetoelectric coupling in the CuO thin film would generate new possibility of further strain tuning to observe room-temperature magnetoelectric multiferroicity suitable for scores of applications such as memories, sensors, energy-harvesting devices, generators, amplifiers, and so forth.