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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures

Arvind Shankar Kumar1, Mingyuan Wang1, Yancheng Li1

  • 1Department of Physics, Case Western Reserve University, 2076 Adelbert Road, Cleveland, Ohio 44106, United States.

ACS Applied Materials & Interfaces
|September 21, 2020
PubMed

Keywords:
2D materialsband alignmentelectron transportsemiconductorvan der Waals heterostructure

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