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Updated: Dec 8, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Shot Noise of a Temperature-Biased Tunnel Junction
Samuel Larocque1, Edouard Pinsolle1, Christian Lupien1
1Université de Sherbrooke, Institut Quantique, Département de Physique, Sherbrooke, Québec J1K 2R1, Canada.
Abstract:
We report the measurement of the current noise of a tunnel junction driven out of equilibrium by a temperature and/or voltage difference, i.e., the charge noise of heat and/or electrical current. This is achieved by a careful control of electron temperature below 1 K at the nanoscale, and a sensitive measurement of noise with wide bandwidth, from 0.1 to 1 GHz. An excellent agreement between experiment and theory with no fitting parameter is obtained. In particular, we find that the current noise of the junction of resistance R when one electrode is at temperature T and the other one at zero temperature is given by S=2 ln2k_{B}T/R.
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