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High performance IGZO-based phototransistors by BN/BP interface engineering.

Daqing Li1, Haiyan Nan1, Penglin Mou1

  • 1Engineering Research Center of IoT Technology Applications (Ministry of Education) Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China.

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|September 21, 2020
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Summary
This summary is machine-generated.

Interface engineering with boron nitride (BN)/black phosphorus (BP) significantly enhances indium-gallium-zinc oxide (a-IGZO) phototransistors. This method improves photoresponse by suppressing carrier recombination, paving the way for high-performance optoelectronic devices.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Recent advances in optoelectronics utilize heterojunctions of indium-gallium-zinc oxide (a-IGZO) and 2D van der Waals materials.
  • Improvements in the a-IGZO channel itself through heterojunction construction are seldom reported.

Purpose of the Study:

  • To investigate the impact of boron nitride (BN)/black phosphorus (BP) interface engineering on a-IGZO phototransistor performance.
  • To enhance photoresponse by optimizing carrier dynamics within the a-IGZO channel.

Main Methods:

  • Fabrication of a-IGZO phototransistors with an integrated BN/BP interface.
  • Analysis of band bending and photo-generated carrier transfer mechanisms at the IGZO/BP interface.
  • Characterization of photoresponse, photoresponsivity, and external quantum efficiency.

Main Results:

  • Significant suppression of photo-generated carrier recombination in the a-IGZO channel.
  • Enhanced photoresponsivity from 0.05 A W-1 to 0.3 A W-1 at 447 nm.
  • Achieved a maximum external quantum efficiency of 83.4% for the BN/BP decorated IGZO phototransistor.

Conclusions:

  • BN/BP interface engineering offers a general strategy for improving oxide-semiconductor based optoelectronic devices.
  • Optimized band bending and carrier transfer pathways are crucial for suppressing recombination and boosting device performance.
  • This approach demonstrates potential for developing next-generation high-performance phototransistors.