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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers
Andrey A Pil'nik1,2, Andrey A Chernov1,2, Damir R Islamov3,4
1Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation.
Abstract:
In this study, we developed a continuum theory of the charge transport in dielectrics by trapped electrons and holes, which takes into account two separate contributions of the current of trapped charge carriers: the drift part and the diffusion one. It was shown that drift current is mostly dominant in the bulk, while the diffusion one reaches significant values near contacts. A comparison with other theoretical models and experiments shows a good agreement. The model can be extended to two- and three-dimensional systems. The developed model, formulated in partial differential equations, can be numerically implemented in the finite element method code.
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